Aug 14, 2001 an igbt gate driver circuit includes means for detecting when the collectortoemitter voltage vce of a turnedon igbt, intended to be operated in the saturation region, increases above a preset level, indicative of a fault condition, such as a short circuit. In case you want additional capacitance, the transil diode is bringing more than necessary. The gd3100 is an advanced singlechannel gate driver for igbtssic. Gate drive circuits can also provide fault protection of igbt in the circuit.
Single channel plug and play gate drivers for 4500v igbt modules. Igbt gate driver reference design for parallel igbts with shortcircuit protection and external bjt buffer 2 system design theory 2. Igbt modules are designed to survive low impedance short circuits for a minimum of 10sec. General gate drive requirements for high power igbt modules the main components of a typical gate drive circuit are illustrated in the simplified circuit schematic. Ic is shown for different values of the gate capacitor c1. A necessary companion for discrete power mosfets and igbts as well as digital microcontrollers, dsps and fpgs or analog controllers in any switchedmode power converter, stdrive gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer. Besides gate drive circuits, products which contain gate power supplies are available. Pdf fast overcurrent protection of high power igbt modules. Modulator project, an igbt gate driver 2 was developed to drive the eupec igbt module fz800r33, rated at 3. An igbt gate driver circuit includes means for detecting when the collectortoemitter voltage vce of a turnedon igbt, intended to be operated in the saturation region, increases above a preset level, indicative of a fault condition, such as a short circuit.
Hybrid circuits optimize gate drive and protect high power igbt. The fault protection methods used in igbt converters are different from their gate turnoff thyristor gto counterparts. In this work, a gate driver with desaturation protection is designed for the 1. Pdf a new gate driver integrated circuit for igbt devices. If the short circuit occurs close to the module, the current may rise at several kas. The gate driver consists of a standard gate drive from concept technology ltd. Gate driver reference design for parallel igbts with short. Us6275093b1 igbt gate drive circuit with short circuit. Thus it has the advantages of mosfet, including fast operation speed, high switching frequency, high input impedance, simple drive circuit and good thermal temperature. To understand the new driver circuit details, first look at the typical gate drive circuit.
Jun 10, 2018 the short circuit withstand time is shorter than igbt. In addition, you can enable fault latch circuitry which automatically shuts down the module and does not resume operation till power reset occurs. Integrated galvanic isolation and low onresistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and railtorail gate voltage control. Igbt protection in ac or bldc motor drives infineon technologies. Higher gain leads to higher shortcircuit current levels within the igbt, so clearly lower gain igbts will have lower shortcircuit levels.
The second test is the addition of the 750 ohm resistor between the gate and the off driver. Oct 02, 2003 an igbt gate driver integrated circuit with fullbridge output stage and short circuit protections abstract. The short circuit withstand time is shorter than igbt. Now lets take a look at the different overcurrent and short circuit protection methods. Igbt high power modules are protected against overcurrent and shortcircuit. Gate driver reference design for parallel igbts with shortcircuit protection and current buffer tida00917 this product has been released to the market and is available for purchase. Among the various short circuit protection schemes, desaturation protection is the most mature and widely used solution.
This circuit allows operation of the igbts with a higher onstate gate voltage, which can thereby reduce the conduction loss in the device without compromising the short circuit protection. Gate drive circuit an overview sciencedirect topics. It is usually desirable to include short circuit protection in the gate drive circuit to provide the fast response required for protection against severe low impedance short circuits. Comparative design of gate drivers with shortcircuit. Protecting the igbts against short circuit conditions is a. Accurate and configurable under voltage lockout provides protection while ensuring. The most popular overcurrent short circuit protection method for igbt and mosget is desat. A fast overcurrent protection scheme for igbt modules through. Galvanic isolation is provided by power integrations innovative solid insulator fluxlink technology. Tvs diode protection for vfdsigbt inverters active clamping is a technique that keeps a transient overvoltage below the critical limits when the igbt turns off. High power igbt modules employ hybrid ic gate drives including protection circuits. Typically, this protection has been provided by collectoremitter voltage sensing or socalled desaturation detection. Igbt gate driver reference design for parallel igbts with short.
Smart gate driver coupler tlp5214 application note toshiba. The driver must detect the overcurrent or the shortcircuit to cutoff the current as fast as. Gate driver configuration and short circuit protection for 3. Igbt gate driver reference design for parallel igbts. Comparative design of gate drivers with shortcircuit protection. The insulated gate bipolar transistor hereinafter referred to as igbt is a composite device of mosfet and gtr. This operation is only permitted if a short circuit time t psc with short circuit conditions is specified in the igbt datasheet. Essential for the design of the driver is to limit the voltage at the igbt and handling of short circuits. This paper presents a monolithic igbt gate driver design with an original fullbridge topology output stage, implemented with high voltage ldmosfets 36160v1a for power integrated circuits using standard low cost 2. Application of igbt drive and protection circuit chinasource. Line and shoot through mode, the shortcircuit current flows from and to the dc bus. Robust gate drive protection features such as fast shortcircuit protection desat, active miller clamp, shootthrough protection, fault, shutdown, and over current protection, make these driver ics wellsuited for both silicon and wide. Driver cores from the skhi and skyper family can be optimized using adapter boards for each module type.
The saturation circuit detects vds of mosfet, or vce igbt. The current is imposed by the igbt and the gateemitter voltage. An igbt gate driver integrated circuit with fullbridge. Chapter 5 protection circuit design 54 short circuit overcurrent detection 1 detection in the circuit as described previously, in the event of a short circuit, the igbt must be protected as soon as possible. Eicedriver gate drivers provide a wide range of typical output current options, from 0. The short circuit current increases with increasing gate voltage, thus. Jul 25, 2019 when the gate voltage is increased, it is beneficial to reduce the turnon loss and conduction loss of the igbt, but at the same time, the shortcircuit time that the igbt can withstand is shortened below 10. The 1sp0351 is designed with a simple and easy to use plug and play feature that facilitates commissioning and allows immediate operation after installation. This accentuates the importance of the gate driver circuit and its overcurrent detection and protection features.
The sid1183k is a single channel igbt and mosfet driver in an esop package. This means certain carbide mosfet needs more stringent short circuit protection. The desaturation of the igbt is detected by the dynamic short circuit protection of the driver. Short circuit faults are the most critical failure mechanism in power converters. This paper will describe the characteristics and operation of these newly developed hybrid circuits. The up to 8 a peak output drive current enables the product to drive devices up to 600 a without requiring any additional active components. Igbt gate driver reference design for parallel igbts with. For singlemode, the gate driver will be shut down once a short circuit fault is detected. Evaluating 1200 v sic mosfets robustness under short circuit. Jun 20, 2019 short circuit protection via gate driver ic desat protection.
Solution comparison of gate drive and igbt protection for the ir27 circuit, as shown in figure 5, the ir27 and a microcontroller c share the same ground potential the negative dc bus potential. In a gto converter, a crowbar is used for protection and as a result there is no current limiting. The third test is the addition of zener diodes to quickly drop the voltage, the 750 ohm resistor drops the residual voltage at the igbt gate. Gate driver a halfbridge gate driver with a shortcircuit protection circuit is developed, as figure1a shows.
Gate driver reference design for parallel igbts with short circuit protection and current buffer tida00917 this product has been released to the market and is available for purchase. When an on input signal is applied for a period longer than ttrip and the collector voltage is high, the hybrid ic will recognize the condition as a shortcircuit and immediately reduce the gate voltage. Gda2a4s1 is a 4 channel igbt gate driver board with configurable dead time and short circuit protection. The short circuit current is not detected by the current sensor. Protection against overcurrent and short circuit undervoltage lockout optimized for igbts negative gate drive capability cost effectively drives power mosfets and bipolar transistors this is a pb. They support 2level, 3level and multilevel converters and have been designed to precisely and reliably drive 4500 v to 6500 v igbt modules while delivering optimum protection. A desaturation fault detection circuit provides protection for power semiconductor switches igbt or mosfets against short circuit current events which may lead to destruction of these power switches. Igbt short circuit protection using builtin desat and adjustable soft turnoff time built in common mode choke and emitter resistance for limiting emitter loop current 8000vpk viotm and 2121vpk viorm reinforced isolation very high cmti of 100kvus. If you use the hybrid ics in your equipment design as electronic block, the products greatly contribute standardization of design and parts. Igbt gate drive circuit with short circuit protection. Igbt overcurrent and shortcircuit protection in industrial motor. As shown in figure 4, the standard approach for active clamping is to use tvs diodes connected between the auxiliary collector and the gate of an igbt.
However, for multiplemode, the gate driver will only. Gate driver configuration and short circuit protection for. Igbt gate driver reference design for parallel igbts with shortcircuit protection and external bjt buffer 1. Igbt gate driver dcdc converter 5 powerex, inc, pailion ane, youngwood, pennsylania pwrxcom 616 operation of protection circuit 1. Semikron offers two different igbt driver families for any application. The isolated single gate driver ic is the 1ed020i12b2 from in. Robust gate drive protection features such as fast shortcircuit protection desat, active miller clamp, shootthrough protection, fault, shutdown, and over current protection, make these driver ics wellsuited for both silicon and widebandgap power devices, including coolgan, and coolsic. Other than driver circuits, we lineup products with builtin short circuit protection circuit and gate power supply. Protecting a sic mosfet from short circuit failure requires the gate drive to detect the overcurrent condition and turn off the mosfet within its withstand time. The shortcircuit protection circuit built in the igbt driver recognizes.
The mc33153 is specifically designed as an igbt driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Influence of short circuit conditions on igbt short circuit current in. A new gate driver integrated circuit for igbt devices with advanced protections. Representative block diagram this device contains 3 active transistors. Gate driver boards for sic, mosfet and igbts taraz technologies. Due to the lack of gate driver integrated circuit ic with desaturation protection for the silicon carbide sic metaloxidesemiconductor fieldeffect transistor mosfet, the conventional. It is necessary to stop the overcurrent within the short circuit. Therefore, the time from overcurrent detection to the complete turnoff in each circuit must work effectively as fast as possible. Igbt overcurrent and shortcircuit protection in industrial. Brake igbt drive circuit with eliminated by integrated brake igbt an optical isolator driver circuit table 2. The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor igbt gate.
With shortcircuit protection and external bjt buffer. Igbt overcurrent protection igbt protection from overcurrent conditions is a critical part of system. Protection is triggered when detected voltage is above prestat reference voltage, typically somewhere between 7 volts to 10 volts. The first test is simply on and off with just a single gate resistor between the driver and the igbt. This latest high voltage integrated circuit provides a monolithic solution to driving all six igbt gate drivers, while simultaneously providing full igbt protection and soft shutdown.305 468 54 532 1302 238 1169 153 1499 1161 341 616 1098 690 1050 475 406 1269 638 199 893 597 1388 382 1189 904 960 1166 1141 614 846 311 1048